As the performance of silicon-based chips approaches physical limits, scientists around the world are seeking alternative solutions, and two-dimensional semiconductors represented by molybdenum disulfide are one of them. On the 30th, the top international academic journal "Science" published a collaborative paper by the teams of Wang Xinran and Li Taotao from Nanjing University and Wang Jinlan from Southeast University online. They innovatively developed the "oxygen assisted metal organic chemical vapor deposition technology", breaking through the technical difficulties that restrict the large-scale preparation of large-sized molybdenum disulfide films. Wang Xinran introduced that molybdenum disulfide has excellent electrical properties, but it is not easy to replace silicon-based materials. As a latecomer, molybdenum disulfide needs to adapt to the mature process of existing semiconductor production lines, which is metal organic chemical vapor deposition technology. During the vapor deposition process, the metal organic precursor is thermally decomposed, and the reaction products adhere to the substrate surface, forming a molybdenum disulfide thin film. ”Li Taotao said that traditional metal organic chemical vapor deposition technology is limited by reaction kinetics, which not only slows down the growth rate of thin films, but also produces carbon containing impurities during the decomposition of precursors, seriously affecting the quality of thin films. To solve these problems, the team has conducted years of research and proposed introducing oxygen assistance to combine oxygen with carbon elements in the precursor at high temperatures, reducing carbon pollution. Following this approach, the team developed a 6-inch molybdenum disulfide film, and the experimental results showed that the growth rate of the film was two to three orders of magnitude higher than traditional methods. Wang Xinran stated that the team has mastered key industrialization technologies such as two-dimensional semiconductor substrate engineering and dynamic control. Due to the use of 12 inch thin films in silicon-based semiconductor production lines, the team is intensifying the research and development of new vapor deposition equipment. The next step will be to attempt large-scale preparation of 12 inch molybdenum disulfide thin films. The reviewer of Science believes that this study has overcome the long-standing dynamic limitations and carbon pollution problems that traditional metal organic chemical vapor deposition technology has been unable to solve, and is of great significance for accelerating the transition of two-dimensional semiconductors from laboratories to production lines. (New Society)