The third-generation semiconductor materials represented by silicon carbide (SiC) are the driving factors and important guarantees for the transformation and upgrading of China's manufacturing industry. The reporter learned from the Institute of Microelectronics of the Chinese Academy of Sciences that China has successfully verified the first domestic silicon carbide (SiC) power device in space, and the third-generation semiconductor materials are expected to drive the upgrading of China's aerospace power supply. According to Liu Xinyu, a researcher at the Institute of Microelectronics, Chinese Academy of Sciences, power devices are the core of power conversion and control, known as the "heart of power electronic systems", and are one of the most basic and widely used devices. As the performance of silicon-based power devices approaches their limits, third-generation semiconductor materials represented by silicon carbide (SiC), with their unique advantages, can meet the high energy efficiency, miniaturization, and lightweight needs of space power systems, and have important strategic significance for the development of new generation aerospace technology. On November 15, 2024, the silicon carbide (SiC) loading system jointly developed by the Liu Xinyu and Tang Yidan teams of the Institute of Microelectronics, Chinese Academy of Sciences, and the Liu Yanmin team of the Space Application Engineering and Technology Center, Chinese Academy of Sciences, took the Tianzhou-8 cargo spaceship to space, and started the orbit science experiment of the space station. The main task of this mission is to conduct space verification of domestically developed high-voltage radiation resistant silicon carbide (SiC) power devices, and to verify their application in aerospace power supplies. At the same time, scientific research on comprehensive radiation effects will be conducted to gradually improve the power of China's aerospace digital power supplies and support future single power modules to reach the kilowatt level Liu Xinyu said. After more than a month of in orbit power up testing, the load test data of silicon carbide (SiC) was normal, and the in orbit testing and application verification of high-voltage 400V silicon carbide (SiC) power devices were successfully carried out. The static and dynamic parameters in the power system met expectations. Industry experts believe that China's successful verification of power devices made from third-generation semiconductor materials in space signifies that under the demand for space payloads measured in grams, silicon carbide (SiC) power devices are expected to drive the upgrade and replacement of space power systems, providing a new generation of power devices for China's future lunar exploration projects, manned moon landing, deep space exploration, and other fields. (New Society)